Li Auto breaks ground on power semiconductor R&D, production base in Suzhou

Shanghai (Gasgoo)- On August 24, Li Auto officially started construction of its power semiconductor R&D and production base in Suzhou city, Jiangsu province, indicating that the Chinese NEV startup has launched its self-owned industrial chain deployment for the next-generation high-voltage electric drive technologies.

According to Li Auto's press release, the new Suzhou facility will focus on the R&D and production of the third-generation automotive-grade SiC power modules, aiming to develop the capabilities of designing and manufacturing automobile-dedicated power modules.

Li L9; photo credit: Li Auto

The project is managed by Suzhou Sike Semiconductor Co., Ltd., which is jointly established by Li Auto and Hunan San'an Semiconductor Co., Ltd. It is expected to go into the phase of equipment installation and debugging this year and start the trial manufacturing of samples in the first half of 2023. With the official production starting in 2024, the base is anticipated to ramp up its production capacity gradually to a maximum of 2.4 million SiC half-bridge power modules annually.

Li Auto said it would build a "two-wheel-drive" product matrix embracing both REEVs (range-extended electric vehicles) and supercharging-tech-capable BEVs (battery electric vehicles). Notably, its BEV products will carry the 800V high-voltage electric drive system, which is enabled by SiC power modules.