BYD to take IGBT self-development as core competence

Shanghai (Gasgoo)- Chinese automaker BYD is likely to develop its own IGBT (insulated gate bipolar transistor) technology as the core competency, according to local media.

At the launching ceremony of the BYD Qin Pro, the automaker announced that the vehicle adopts its self-developed IGBT power device. Besides, when the company depicted its ambition to make a world-leading platform of new energy, the key word “BYD IGBT” showed on the screen.

As the "center processing unit" of new energy vehicles (NEV), the IGBT technology has long been monopolized by the companies from the U.S., Europe and Japan, etc. Independently developing IGBT will make BYD no longer restricted by foreigner developer in this core semiconductor technology, forming another core competence in addition to the DM (dual model) system and the e-platform. The China-based automaker has already applied its self-developed IGBT module in some NEV models, such as the BYD Qin and BYD Tang.

BYD has reportedly gained significant achievements in independently developing IGBT. It currently has a country-leading whole industry chain of IGBT, covering such sectors as IGBT chip design, wafer manufacturing, module packaging, simulation testing as well as complete vehicle testing. According to relevant data, over 600,000 units of IGBT have been installed in BYD vehicles, which collect huge amount of testing data for the company.